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Part Number : HN1B01FDW1T1G
Manufacturer : Sanyo Semiconductor/ON Semiconductor
Description : HN1B01FDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN1B01FDW1T1G More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.34
Remark : Manufacturer: Sanyo Semiconductor/ON Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Width : 1.7 mm
Length : 3.1 mm
Polarity : NPN, PNP
Case/Package : SC
Number of Pins : 6
Power Dissipation : 380 mW
Voltage Rating (DC) : -60 V
Max Collector Current : 200 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 7 V
Collector Emitter Voltage (VCEO) : 50 V
Collector Emitter Saturation Voltage : -150 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 4686 In Stock
Applications : Infotainment & cluster Data storage Hybrid, electric & powertrain systems
Height : 1.1 mm
hFE Min : 200
Packaging : Tape & Reel (TR)
Current Rating : 200 mA
Contact Plating : Tin
Number of Elements : 2
Element Configuration : Dual
Max Power Dissipation : 380 mW
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 60 V
Collector Emitter Breakdown Voltage : 50 V
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