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Part Number : BFS17WH6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFS17WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFS17WH6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.40
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Height : 800 µm
Polarity : NPN
Packaging : Tape & Reel
Case/Package : SOT
Number of Pins : 3
Power Dissipation : 280 mW
Transition Frequency : 1.4 GHz
Max Collector Current : 25 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2.5 V
Collector Emitter Voltage (VCEO) : 15 V
Collector Emitter Saturation Voltage : 400 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 2830 In Stock
Applications : Infotainment & cluster Enterprise projectors Wireless infrastructure
Width : 1.25 mm
Length : 2 mm
Frequency : 2.5 GHz
Power Gain : 12.7 dB
Noise Figure : 3.5 dB
Package Quantity : 3000
Number of Elements : 1
Max Breakdown Voltage : 15 V
Max Power Dissipation : 280 mW
Min Operating Temperature : -65 °C
Collector Base Voltage (VCBO) : 25 V
Collector Emitter Breakdown Voltage : 15 V
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