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Part Number : BFR35APE6327HTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFR35APE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFR35APE6327HTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.41
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 16 dB
Width : 1.3 mm
Length : 2.9 mm
Polarity : NPN
Packaging : Tape & Reel
Case/Package : SOT
Max Frequency : 5 GHz
Number of Pins : 3
Power Dissipation : 280 mW
Voltage Rating (DC) : 15 V
Element Configuration : Single
Max Power Dissipation : 280 mW
Min Operating Temperature : -65 °C
Collector Base Voltage (VCBO) : 20 V
Collector Emitter Voltage (VCEO) : 15 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 7453 In Stock
Applications : Connected peripherals & printers Medical Electronic point of sale (EPOS)
Mount : Surface Mount
Height : 1 mm
hFE Min : 70
Frequency : 5 GHz
Power Gain : 16 dB
Noise Figure : 1.4 dB
Current Rating : 45 mA
Package Quantity : 3000
Number of Elements : 1
Transition Frequency : 5 GHz
Max Collector Current : 45 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2.5 V
Max Junction Temperature (Tj) : 150 °C
Collector Emitter Breakdown Voltage : 15 V
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