Sign In | Join Free | My frbiz.com |
|
Part Number : 2SK3906(Q)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : 2SK3906(Q) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : 2SK3906(Q) More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.00
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Through Hole
Height : 19 mm
Fall Time : 10 ns
Rds On Max : 330 mΩ
Termination : Through Hole
Input Capacitance : 4.25 nF
Threshold Voltage : 4 V
Dual Supply Voltage : 600 V
Max Power Dissipation : 150 W
Min Operating Temperature : -55 °C
Gate to Source Voltage (Vgs) : 30 V
Drain to Source Voltage (Vdss) : 600 V
Products Category : Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty : 90 In Stock
Applications : Wireless infrastructure Test & measurement Mobile phones
Width : 4.8 mm
Length : 15.9 mm
Rise Time : 12 ns
Nominal Vgs : 4 V
Number of Pins : 3
Power Dissipation : 150 W
Number of Elements : 1
Element Configuration : Single
Max Operating Temperature : 150 °C
Drain to Source Resistance : 330 mΩ
Continuous Drain Current (ID) : 20 A
Drain to Source Breakdown Voltage : 600 V
![]() |
2SK3906(Q) Images |