Part Number :
2SK3906(Q)
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Description :
2SK3906(Q) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
2SK3906(Q) More Information
ECAD :
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Pricing(USD) :
$0.00
Remark :
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Through Hole
Height :
19 mm
Fall Time :
10 ns
Rds On Max :
330 mΩ
Termination :
Through Hole
Input Capacitance :
4.25 nF
Threshold Voltage :
4 V
Dual Supply Voltage :
600 V
Max Power Dissipation :
150 W
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
30 V
Drain to Source Voltage (Vdss) :
600 V
Products Category :
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty :
90 In Stock
Applications :
Wireless infrastructure
Test & measurement
Mobile phones
Width :
4.8 mm
Length :
15.9 mm
Rise Time :
12 ns
Nominal Vgs :
4 V
Number of Pins :
3
Power Dissipation :
150 W
Number of Elements :
1
Element Configuration :
Single
Max Operating Temperature :
150 °C
Drain to Source Resistance :
330 mΩ
Continuous Drain Current (ID) :
20 A
Drain to Source Breakdown Voltage :
600 V
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