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Part Number : 2SK3309(Q)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : 2SK3309(Q) datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : 2SK3309(Q) More Information
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Pricing(USD) : $0.00
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Through Hole
Rise Time : 25 ns
Resistance : 480 mΩ
Input Capacitance : 920 pF
Element Configuration : Single
Max Operating Temperature : 150 °C
Drain to Source Resistance : 650 mΩ
Continuous Drain Current (ID) : 10 A
Drain to Source Breakdown Voltage : 450 V
Products Category : Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty : 353 In Stock
Applications : Infotainment & cluster Pro audio, video & signage Enterprise projectors
Fall Time : 10 ns
Rds On Max : 650 mΩ
Case/Package : TO-220-3
Power Dissipation : 65 W
Max Power Dissipation : 65 W
Min Operating Temperature : -55 °C
Gate to Source Voltage (Vgs) : 30 V
Drain to Source Voltage (Vdss) : 450 V
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